| 我国纳米压印光刻技术专利态势分析 |
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| 引用本文： | 戴翀.我国纳米压印光刻技术专利态势分析[J].科技和产业,2013(4):111-115. |
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| 作者姓名： | 戴翀 |
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| 作者单位： | 国家知识产权局专利局 光电发明审查部， 北京 100088 |
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| 摘 要： | 由于具有高分辨率、高产量、低成本等特点,纳米压印光刻技术被IC业界认为是最具发展前景的下一代光刻技术之一。本文旨在通过对纳米压印光刻技术中国专利申请进行统计分析,为我国进行具有自主知识产权的纳米压印光刻技术研发和制定有效的专利战略提供参考。
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| 关 键 词： | 纳米压印光刻 专利 统计分析 |
Patent Analysis for Nanoimprint Lithography Technology in China |
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| DAI Chong.Patent Analysis for Nanoimprint Lithography Technology in China[J].SCIENCE TECHNOLOGY AND INDUSTRIAL,2013(4):111-115. |
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| Authors: | DAI Chong |
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| Institution: | DAI Chong(Examination of Photoelectricity Invention Department of the Patent Office of the State Intellectual Property Office of China,Beijing 100088,China) |
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| Abstract: | Nanoimprint lithography is regarded as one of the most promising next-generation photolithography technology in IC industry,as it has several advantages such as ultrahigh resolution,high yield and low cost.This paper aims to provide a statistical analysis for Chinese patent application in nanoimprint lithography technology,so as to offer the reference for the R&D of nanoimprint lithography technology with independent intellectual property and the establishment ofeffective patent strategy. |
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| Keywords: | nanoimprint lithography patent statistical analysis |
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