国内硅烷法制备电子级区熔用多晶硅的进展

对硅烷热分解法制备多晶硅的工艺作了介绍,探讨了硅烷法制备电子级多晶硅的优势。硅烷CVD法所沉积的多晶硅,在电阻率、少子寿命、杂质含量等方面符合高纯多晶硅的要求,纯度不仅可以达到国标(GB/T 12963-2009)电子一级品的标准,还可以满足区熔用超高纯多晶硅的要求。合理控制反应条件、保持反应环境的高度洁净,能够得到均匀、致密的高纯多晶硅棒,可以作为区熔法生产单晶硅棒的原料。

Research progress of electronic FZ grade polysilicon preparation based on silane method

The production of polysilicon by thermal decomposition of silane was introduced,and its advantages were discussed.Actual results show that the polysilicon deposited by silane CVD method can meet the requirements of high-purity polysilicon on resistivity,minority carrier lifetime and contamination,and its purity can not only reach or even exceed the first grade of National Standard(GB/T12963—2009),but also meet the FZ grade polysilicon requriements.By reasonably controlling the reaction conditions,and keeping the reaction environment highly clean,the uniform,dense and high-purity polysilicon rods can be obtained,which can be used as raw material for FZ grade monocrystalline silicon.