| C型缓冲电路用于MOSFET逆变电路的仿真分析 |
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| 引用本文： | 周庆红. C型缓冲电路用于MOSFET逆变电路的仿真分析[J]. 浙江工商职业技术学院学报, 2006, 5(2): 49-51 |
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| 作者姓名： | 周庆红 |
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| 作者单位： | 浙江工商职业技术学院,机电工程系,浙江,宁波,315012 |
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| 摘 要： | 本文就C型缓冲电路用于以大功率MOSFET为主开关器件的高频逆变器时所存在的受各种因素影响较大的问题,在缓冲电路组数不同、主回路寄生电感不同以及缓冲电路参数不同等情况下,使用Pspice仿真软件进行仿真,通过仿真波形分析上述各因素对开关管关断电压吸收效果的影响,得出了一些有益的结论,对设计应用C型缓冲电路时有重要的参考价值.
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| 关 键 词： | 场效应晶体管 高频逆变器 C型缓冲电路 仿真 |
| 文章编号： | 1671-9565（2006）02-0049-03 |
| 收稿时间： | 2006-03-10 |
| 修稿时间： | 2006-03-10 |
On Simulation of C Snubber Circuit for MOSFET Inverter |
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| ZHOU Qing-hong. On Simulation of C Snubber Circuit for MOSFET Inverter[J]. Journal of Zhejiang Business Technology Institute, 2006, 5(2): 49-51 |
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| Authors: | ZHOU Qing-hong |
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| Affiliation: | Zhejiang Business Technology institute, Ningbo 315012, China |
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| Abstract: | For the problem that performance changes greatly with different outside factors when C snubber circuit is applied to the high-power MOSFET full-bridge inverter, under different number of snubber circuits and characteristic of circuit parameters, the performance of full-bridge inverter is simulated, and some useful conclusions are reached by analyzing the simulation results, which will help design more perfect C snubber circuits. |
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| Keywords: | MOSFET inverter C snubber circuit simulation |
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