| 特高压晶闸管掺杂技术研究 |
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| 引用本文： | 高山城,罗艳红,张琦,吴飞鸟,高飞.特高压晶闸管掺杂技术研究[J].价值工程,2014(17):47-48. |
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| 作者姓名： | 高山城 罗艳红 张琦 吴飞鸟 高飞 |
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| 作者单位： | 西安电力电子技术研究所,西安710061 |
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| 基金项目： | 科技部技术开发专项研究课题：特高压晶闸管高寿命、高均匀性掺杂技术研究（2008EG119124） |
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| 摘 要： | 特高压晶闸管半导体芯片主要通过掺杂技术形成。高均匀性、高寿命掺杂技术是获得高品质特高压晶闸管的根本保证。本文通过一系列大胆的创新方法和先进"6σ设计1]"的控制措施,成功研制了世界上首只6英寸4000A/8000V特高压晶闸管,并成功应用于"向家坝-上海±800KV/6400MW"特高压直流输电示范工程中。
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| 关 键 词： | 晶闸管 掺杂技术 特高压直流输电 6σ设计 |
On Extra-high Voltage Thyristor Doping Technology |
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| GAO Shan-cheng,LUO Yan-hong,ZHANG Qi,WU Fei-niao,GAO Fei.On Extra-high Voltage Thyristor Doping Technology[J].Value Engineering,2014(17):47-48. |
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| Authors: | GAO Shan-cheng LUO Yan-hong ZHANG Qi WU Fei-niao GAO Fei |
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| Institution: | (Xi＇an Power Electronics Research Institute , Xi＇an 7100617 China) |
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| Abstract: | Extra-high voltage thyristor semiconductor chip is mainly formed by doping techniques. High uniformity and high life expectancy doping technology is the fundamental guarantee to obtain high-quality ultra-high voltage thyristor. Through a series of bold innovative methods and advanced＆quot;6σdesign＆quot;control measures, this paper successfully developed the world＇s first six inches 4000A/8000V extra-high voltage thyristors, and successfully applied into ＆quot;Xiangjiaba-Shanghai ± 800KV/6400MW＆quot; extra-high voltage direct-current transmission demonstration project. |
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| Keywords: | thyristor doping technology extra-high voltage direct-current transmission 6σdesign |
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