X射线测量InGaN多量子阱的厚度组分及应变

高分辨率X射线衍射具有不损伤样品,无污染、高精度等优点,能够得到有关晶体的完整信息,是研究薄膜性质的重要手段之一。本文采用高分辨X射线衍射得到InGaN/GaN样品的ω/2θ扫描图和倒易空间图,研究InGaN/GaN样品的应变和组分、InGaN/GaN多量子阱的平均组分级厚度周期。从倒易空间图像得出的晶格常数与由002面和105面摇摆曲线所计算出的晶格常数相比较,垂直晶格常数符合得很好,而水平方向的晶格常数则有较大的差别,可以认为从倒易空间图像中得出的晶格常数更为准确。

To Measure the Thickness Components and Contingency of InGaN Multiple Quantum Well by X-ray

High-resolution X-ray diffraction has many advantages,such as,no damage to the sample,non-polluting,high-precision,etc.,and it can get complete information about the crystal and is an important means to study the nature of film.This paper uses high-resolution X-ray diffraction to get the ω/2θ scan and reciprocal space maps of InGaN / GaN samples of InGaN / GaN sample and study the components and contingency of InGaN / GaN sample and the average group grading thickness period of InGaN / GaN multi-quantum well.Compared to the crystallographic lattice constant got from the reciprocal space images and 002 and 105 rocking curves,it is well agree with the vertical crystallographic lattice constant,but the horizontal crystallographic lattice constant has greater the difference,so we can consider that the crystallographic lattice constant from the reciprocal space image is more accurate