| 将硅片干法刻蚀技术引入设计性、研究性的普通物理实验 |
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| 引用本文： | 李卫. 将硅片干法刻蚀技术引入设计性、研究性的普通物理实验[J]. 价值工程, 2010, 29(35): 150-150 |
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| 作者姓名： | 李卫 |
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| 作者单位： | 南京邮电大学,南京210003 |
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| 基金项目： | 江苏省高校自然科学基金，南京邮电大学引进人才科研启动基金，南京邮电大学教学改革研究项目[ |
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| 摘 要： | 对硅的干法刻蚀技术是现代半导体工业中非常重要的一项工艺。本文介绍了如何将硅片干法刻蚀技术引入到设计性、研究性的普通物理实验教学中.以及在相关实验教学的设计、实验内容的编排和教学方式等方面的一些特点。
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| 关 键 词： | 硅 干法刻蚀 等离子体刻蚀 设计性 研究性物理实验 教学改革 |
Bringing the Dry Etching Technique of Silicon into the Designed and Investigative General Physics Experiment |
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| Li Wei. Bringing the Dry Etching Technique of Silicon into the Designed and Investigative General Physics Experiment[J]. Value Engineering, 2010, 29(35): 150-150 |
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| Authors: | Li Wei |
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| Affiliation: | Li Wei ( Nanjing University of Posts and Telecommunications, Nanjing 210003, China) |
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| Abstract: | Dry etching technique of silicon is a very important process in the modem semiconductor industry. This article describes how to bring the dry etching technique of silicon into the designed and investigative physics experiment teaching, and some features of the layout of teaching design and content of relevant experiment, as well as the ways of teaching. |
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| Keywords: | silicon dry etching plasma etching designing investigative physics experiments teaching reform |
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