| 氮化硅薄膜制备技术及工艺参数调整 |
| |
| 引用本文： | 张煌军.氮化硅薄膜制备技术及工艺参数调整[J].价值工程,2012,31(15):34. |
| |
| 作者姓名： | 张煌军 |
| |
| 作者单位： | 英利能源(中国)有限公司,保定,071000 |
| |
| 摘 要： | 氮化硅薄膜的制备过程是太阳能电池制造中的一个核心环节,我公司使用的Centrotherm厂家的管式PECVD设备及R&R厂家的链式PECVD设备更是代表了两种最先进的氮化硅薄膜制备技术,本文简要介绍了SiNx薄膜的特性、制备的技术特点及工艺参数的调整等相关知识。
|
| 关 键 词： | SiNx薄膜 PECVD 工艺参数 |
Prepared Technique of Silicon Nitride Film and Adjustment of Process Parameters |
| |
| Zhang Huangjun.Prepared Technique of Silicon Nitride Film and Adjustment of Process Parameters[J].Value Engineering,2012,31(15):34. |
| |
| Authors: | Zhang Huangjun |
| |
| Institution: | Zhang Huangjun(Yingli Green Energy Holding Company Limited,Baoding 071000,China) |
| |
| Abstract: | The preparation of the silicon nitride film is a core part of solar cell manufacturing.The tube PECVD equipment of Centrotherm manufacturer and chain PECVD equipment of R & R manufacturer used in Yingli Green Energy Holding Company Limited represent the two kinds of most advanced preparation technique of silicon nitride film.This paper briefly describes the characteristics of SiNx film,the technical characteristics of preparation as well as the adjustment of process parameters. |
| |
| Keywords: | SiNx films PECVD process parameters |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
|
