| 高电子迁移率管(HEMT)的应用及研制近况 |
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| 引用本文： | 浮冰.高电子迁移率管(HEMT)的应用及研制近况[J].国际商务研究,1988(3). |
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| 作者姓名： | 浮冰 |
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| 作者单位： | 成都国营亚光电工厂研究所 |
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| 摘 要： | 本文较详细地评述了当前国内外对高电子迁移率管(HEMT)器件的研制、开发及应用近况.文中对该种器件目前存在的问题及今后的发展趋向也作了简要的介绍.
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| 关 键 词： | 高电子迁移率器件 综述 |
Recent situation about applications and development of high electron mobility transistors |
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| Fu Bing,Chengdu Yaguang Electrotechnology Factory Research Institute.Recent situation about applications and development of high electron mobility transistors[J].International Business Research,1988(3). |
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| Authors: | Fu Bing Chengdu Yaguang Electrotechnology Factory Research Institute |
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| Abstract: | This paper reviews in detail the recent situation of the domestic and foreign high electron mobility transistors development and its application.The problems existing in this devices now and development trend in the future are simply described in the paper too. |
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| Keywords: | High Electron Mobility Devices Review |
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