| 浅谈电力电子器件的发展 |
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| 引用本文： | 闵望. 浅谈电力电子器件的发展[J]. 价值工程, 2011, 30(10): 37-38 |
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| 作者姓名： | 闵望 |
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| 作者单位： | 中国计量学院,杭州,310018 |
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| 摘 要： | 电力电子器件的发展经历了晶闸管（SCR）、可关断晶闸管（GTO）、大功率晶体管（GTR）、绝缘栅晶体管（IGBT）等阶段,本文简单回顾了电力电子技术及电力电子器件的发展过程,介绍了主流现代电力电子器件的工作原理、现状和发展动态。最后,探讨了现代电力电子器件的发展展望。
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| 关 键 词： | 电力电子器件 发展 晶闸管 频率 |
Discussion on the Development of Power Electronic Devices |
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| Min Wang. Discussion on the Development of Power Electronic Devices[J]. Value Engineering, 2011, 30(10): 37-38 |
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| Authors: | Min Wang |
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| Affiliation: | Min Wang( China Jiliang University, Hangzhou 310018, China ) |
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| Abstract: | The development of power electronic devices experiences the stages of Cilicon Controlled Rectifier （SCR）, Gate Turn Off Thyristor（GTO）, Giant Transistor Rectifier（GTR）, Insulated Gate Bipolar Transistor （IGBT）. This paper briefly reviews the development of power electronics technology and power electronic devices, and introduces the working principle, status and developments of modem power electronic devices. Finally, it discusses the prospect of the development of modem power electronic devices. |
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| Keywords: | power electronic devices development thyristor frequency |
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